BUT11APX datasheet(4/8 Pages) PHILIPS

Part #	BUT11APX

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11APX

Fig.7. Switching times waveforms with inductive load.

Fig.8. Normalised power dissipation.

PD% = 100

⋅PD/PD

25˚C = f (Ths)

Fig.9. Typical DC current gain. h

FE = f(IC)

parameter V

CE

Fig.10. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IB); Tj=25˚C.

Fig.11. Base-Emitter saturation voltage.

Solid lines = typ values, V

BEsat = f(IC); at IC/IB =4.

Fig.12. Collector-Emitter saturation voltage.

Solid lines = typ values, V

CEsat = f(IC); at IC/IB =4.

IC

IB

ICon

IBon

-IBoff

t

ts

tf

toff

10 %

90 %

0.0

0.4

0.8

1.2

1.6

2.0

0.01

0.10

1.00

10.00

IB/A

VCEsat/V

IC=1A

2A

3A

4A

0

20

40

60

80

100

120

140

Ths / C

%

Normalised Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

P tot

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

1.0

10.0

IC/A

VBEsat/V

0.0

0.1

0.2

0.3

0.4

0.5

01

10

IC/A

VCEsat/V

0.01

1

100

10

1

0.1

10

h FE

IC / A

Tj = 25 C

1V

5V

September 1998

4

Rev 1.000

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