UTC BD139

NPN EPITAXIAL SILICON TRANSISTOR

1

QW-R204-007,A

NPN POWER TRANSISTORS

FEATURES

*High current (max.1.5A)

*Low voltage (max.80V)

APPLICATION

*Driver stages in hi-fi amplifiers and television circuits.

TO-126

1

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

CONDITIONS

MIN

MAX

UNIT

Collector-base voltage

Open emitter

-

100

V

Collector-emitter voltage

Open base

-

80

V

Emitter-base voltage

Open collector

-

5

V

Collector current(DC)

Ic

-

1.5

A

Peak collector current

-

2

A

Peak base current

-

1

A

Total power dissipation

Ptot

-

8

W

Storage Temperature

-65

+150

°C

Junction Temperature

-

+150

°C

Operating ambient temperature

-65

+150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

VALUE

UNIT

Thermal resistance from junction to ambient

Rth j-a

Note1

100

K/W

Thermal resistance from junction to mounting base

Rth j-mb

10

K/W

Note 1: Refer to TO-126 standard mounting conditions.