2SD1616/A

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 4

www.unisonic.com.tw

QW-R201-008,C

TYPICAL CHARACTERISTICS(Cont.)

DC Current Gain

0.01

50

300

1000

10

10

500

100

30

5

3

1

0.03 0.05 0.1

0.3 0.5

1

3 5

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

0.01

10

0.1

10

1

0.030.05 0.1

0.3 0.5

1

3 5

0.03

0.05

0.3

0.5

3

5

Safe Operating Area

0.5

10

0.1

300

5

0.3

0.05

510

30

3

1

0.03

0.01

100

50

3

1

10ms

20

0m

s

D

C

Power Derating

Ambient Temperature, Ta (℃)

0.8

0.2

200

0.4

175

0

0.6

150

125

100

75

50

25

pw=1ms

U T C assum es no responsibility for equipm ent failures that result from using products at v alues that

ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

herein. U T C products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.