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2SD1616A-G-G03-K Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SD1616A-G-G03-K Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page  2SD1616/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-008,C TYPICAL CHARACTERISTICS Collector Output Capacitance Collector-Base Voltage, VCB (V) 1000 500 300 100 50 30 10 5 3 1 3 5 10 30 50 100 300 IE=0 f=1.0MHz Current Gain-Bandwidth Product Collector Current, IC (A) 1000 500 300 100 50 30 10 5 3 10 5 3 1 0.3 0.1 0.03 0.01 1 VCE=2V Static Characteristic Collector-Emitter Voltage , VCE (V) 2 0 60 80 100 IB=50μA 40 20 46 8 10 IB=100μA IB=150μA IB=200μA IB=250μA IB=300μA Static Characteristic Collector-Emitter Voltage, VCE (V) 0.2 0 0.6 0.8 10 IB=0.5mA 0.4 0.2 10 IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA IB=3.5mA IB=5.0mA 0.4 0.6 0.8 Switching Time Collector Current, IC (A) 0.3 0.1 1 0.5 0.3 0.1 0.01 0.003 0.01 VCC=10V IC=10×IB1= -10×IB2 0.05 0.03 0.001 0.03 0.05 0.5 1 3 5 10 tON tF tSTG |
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