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2SC3320 Datasheet(PDF) 4 Page - Unisonic Technologies |
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2SC3320 Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 5 page 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R214-008,B TYPICAL CHARACTERISTICS 0.03 0.5 5 0.05 0.1 0.3 0.5 Collector Output Characteristics 3 1 0.3 0.1 0.05 0.03 13 5 TC=25℃ 10A 5A 3A 2A IC=1A 1 3 5 10 30 50 100 300 35 10 DC Current Gain 15 1 0.5 0.3 0.1 0.05 VCE=5V 75℃ TC=150℃ 25℃ -50℃ Base Current, IB (A) Collector Current, IC (A) 0.05 0.1 0.3 0.5 51020 Base and Collector Saturation Voltage 0.01 0.03 0.05 0.1 0.3 0.5 1 3 TC=25℃IC=5IB VBE(SAT) VCE(SAT) 3 1 4 500 Safe Operating Area 0.03 0.1 TC=25℃ Single Pulse DC PW=1ms 300 100 50 30 10 5 3 1 0.05 0.3 0.5 1 3 5 10 30 1000 10μ s Collector Current, IC (A) CollectorEmitter voltage, VCE (V) 0.5 13 5 25 Switching Time 0.03 0.3 0.1 tON tSTG tF TC=25℃ VCC=150V IC=5IB1 =-2.5IB2 10 0.05 0.5 1 1.5 Collector Current, IC (A) |
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