2SC3320

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R214-008,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

500

V

400

V

Collector Emitter Voltage

400

V

Emitter Base Voltage

7

V

Collector Current

15

A

Base Current

5

A

Power Dissipation

80

W

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range

and assured by design from -20℃~+85℃.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Voltage

500

V

400

V

Collector Emitter Voltage

400

V

Emitter Base Voltage

7

V

Collector Emitter Saturation Voltage

1

V

Base Emitter Saturation Voltage

1.5

V

Collector Cut-off Current

1

mA

Emitter Cut-off Current

1

mA

DC Current Gain

10

0.5

µs

1.5

µs

Switching Time

0.15

µs

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction to Case

1.55

℃

/W