MMBT3904

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-012,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

6

V

Collector Current

200

mA

Collector Dissipation

350

mW

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX

UNIT

Collector Cut-off Current

50

nA

Base Cut-off Current

50

nA

Collector-base breakdown voltage

60

V

Collector-emitter breakdown voltage (note)

40

V

Emitter-base breakdown voltage

6

V

40

70

100

300

60

DC current gain (note)

30

0.2

V

Collector-emitter saturation voltage (note)

0.3

V

0.65

0.85

V

Base-emitter saturation voltage (note)

0.95

V

Current gain bandwidth product

300

MHz

Output Capacitance

4

pF

Turn on time

70

ns

Turn off time

250

ns

Note: Pulse test: PW<=300

μs, Duty Cycle<=2%