STL160N4F7 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STL160N4F7

Description	N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD (1)

Forward on voltage

ISD = 32 A, VGS = 0 V

-

1.2

V

trr

Reverse recovery time

(see Figure 14. Test circuit for inductive

load switching and diode recovery times)

ID = 32 A, di/dt = 100 A/µs

VDD = 32 V

-

55

ns

Qrr

Reverse recovery charge

-

67

nC

IRRM

Reverse recovery current

-

2.4

A

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STL160N4F7

Electrical characteristics

DS11024 - Rev 3

page 4/18

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