STL160N4F7 datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STL160N4F7

Description	N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID= 250 μA

40

V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 40 V

1

µA

IGSS

Gate-body leakage

current

VGS = 20 V, VDS = 0 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

2

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 16 A

2.1

2.5

mΩ

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS= 0 V

-

2300

-

pF

Coss

Output capacitance

-

786

-

pF

Crss

Reverse transfer capacitance

-

43

-

pF

Qg

Total gate charge

VDD = 20 V, ID = 32 A,

VGS = 10 V

(see Figure 13. Test circuit for gate

charge behavior)

-

29

-

nC

Qgs

Gate-source charge

-

13

-

nC

Qgd

Gate-drain charge

-

5.6

-

nC

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 16 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for resistive

load switching timesand

Figure 17. Switching time waveform)

-

14

-

ns

tr

Rise time

-

6.6

-

ns

td(off)

Turn-off delay time

-

19

-

ns

tf

Fall time

-

5.7

-

ns

STL160N4F7

Electrical characteristics

DS11024 - Rev 3

page 3/18

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