STL160N4F7 datasheet(2/18 Pages) STMICROELECTRONICS

Part #	STL160N4F7

Description	N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

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1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate-source voltage

± 20

V

ID (1) (2)

Drain current (continuous) at TC = 25 °C

120

A

ID (2)

Drain current (continuous) at TC = 100 °C

108

A

IDM (3) (2)

Drain current (pulsed)

480

A

PTOT (2)

Total power dissipation at TC= 25 °C

111

W

ID (4)

Drain current (continuous) at Tpcb = 25 °C

32

A

ID (4)

Drain current (continuous) at Tpcb= 100 °C

22

A

IDM (3) (4)

Drain current (pulsed)

128

A

PTOT (4)

Total power dissipation at Tpcb = 25 °C

4.8

W

IAV

Avalanche current

16

A

EAS

Single pulse avalanche energy (Tj= 25 °C, ID= 16A, VDD= 25V)

260

mJ

Tstg

Storage temperature range

-55 to 175

°C

Tj

Operating junction temperature range

1. Drain current is limited by package

2. This value is rated according to Rthj-c

3. Pulse width limited by safe operating area

4. This value is rated according to Rthj-pcb

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-pcb (1)

Thermal resistance junction-pcb

31.3

°C/W

Rthj-case

Thermal resistance junction-case

1.35

°C/W

1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

STL160N4F7

Electrical ratings

DS11024 - Rev 3

page 2/18

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