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STL160N4F7 Datasheet(PDF) 6 Page - STMicroelectronics |
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STL160N4F7 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 18 page Figure 7. Capacitance variations GIPD301020151418CVR 10 3 10 2 10 1 0 8 16 24 32 40 C (pF) V DS (V) C ISS C OSS C RSS f=1MHz Figure 8. Normalized gate threshold voltage vs temperature GIPD301020151437VTH 1 0.8 0.6 0.4 -75 -25 25 75 125 V GS(th) (norm.) T j (°C) I D = 250 μA Figure 9. Normalized on-resistance vs temperature GIPD301020151447RON 1.8 1.4 1 0.6 -75 -25 25 75 125 R DS(on) (norm.) T j (°C) V GS = 10 V Figure 10. Normalized V(BR)DSS vs temperature GIPD301020151449BDV 1.04 1 0.96 0.92 -75 -25 25 75 125 V (BR)DSS (norm.) T j (°C) I D = 250 µA Figure 11. Source-drain diode forward characteristics GIPD301020151457SDF 0.9 0.8 0.7 0.6 0.5 0.4 0 8 16 24 32 40 V SD (V) I SD (A) T j = -55 °C T j = 25 °C T j = 175 °C STL160N4F7 Electrical characteristics (curves) DS11024 - Rev 3 page 6/18 |
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