MJW21195 datasheet(1/7 Pages) ONSEMI

Part #	MJW21195

Description	16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2006 − Rev. 2

1

Publication Order Number:

MJW21195/D

MJW21195 (PNP)

MJW21196 (NPN)

Preferred Devices

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain − hFE = 20 Min @ IC = 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

250

Vdc

Collector−Base Voltage

VCBO

400

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

400

Vdc

Collector Current

− Continuous

Collector Current

− Peak (Note 1)

IC

16

30

Adc

Base Current − Continuous

IB

5.0

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25

°C

PD

200

1.43

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.7

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

40

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5

ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJW21195

TO−247

30 Units/Rail

16 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

250 VOLTS, 200 WATTS

Preferred devices are recommended choices for future use

and best overall value.

MJW21196

TO−247

30 Units/Rail

http://onsemi.com

MJW21196G

TO−247

(Pb−Free)

30 Units/Rail

MJW21195G

TO−247

(Pb−Free)

TO−247

CASE 340L

2

1

3

MARKING DIAGRAM

MJW2119x

AYWWG

x

= 5 or 6

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1 BASE

2 COLLECTOR

3 EMITTER

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