MJW21195 datasheet(5/7 Pages) ONSEMI

Part #	MJW21195

Description	16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

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MJW21195 (PNP) MJW21196 (NPN)

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There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 150°C; TC is

variable

depending

on

conditions.

At

high

case

temperatures, thermal limitations will reduce the power than

can be handled to values less than the limitations imposed by

second breakdown.

TYPICAL CHARACTERISTICS

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

100

1

10

100

1000

10

1

0.1

100 ms

10 ms

1 Sec

PNP MJW21195

NPN MJW21196

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

100

1

10

100

1000

10

1

0.1

100 ms

10 ms

1 Sec

Figure 15. MJW21195 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. MJW21196 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

10000

1000

100

10

1.0

0.1

10000

1000

100

10

1.0

0.1

TJ = 25°C

ftest = 1 MHz

Cob

Cib

TJ = 25°C

ftest = 1 MHz

Cob

Cib

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