mj21194g datasheet(4/6 Pages) ONSEMI

Part #	MJ21194G

Description	Silicon Power Transistors

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MJ21193, MJ21194

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4

Figure 9. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Typical Base−Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base−Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is vari-

able depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second break-

down.

PNP MJ21193

NPN MJ21194

TYPICAL CHARACTERISTICS

PNP MJ21193

NPN MJ21194

3.0

2.5

2.0

1.5

1.0

0.5

0

100

10

1.0

0.1

1.4

1.2

1.0

0.8

0.6

0.4

0

100

10

1.0

0.1

0.2

10

1.0

0.1

100

10

1.0

0.1

10

1.0

0.1

100

10

1.0

0.1

100

10

1.0

0.1

100

10

1.0

1000

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25°C

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25°C

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

1 SEC

TC = 25°C

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