MJ21194G datasheet(2/6 Pages) ONSEMI

Part #	MJ21194G

Description	Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJ21193, MJ21194

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

250

−

Vdc

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

ICEO

−

100

mAdc

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

IEBO

−

100

mAdc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

−

100

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non−repetitive)

(VCE = 80 Vdc, t = 1 s (non−repetitive)

IS/b

5

2.5

−

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, IB = 5 Adc)

hFE

25

8

−

75

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

−

2.2

Vdc

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

−

1.4

4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

matched

THD

−

0.8

0.08

−

%

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

fT

4

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

−

500

pF

NOTE:

Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤2%

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

PNP MJ21193

NPN MJ21194

IC COLLECTOR CURRENT (AMPS)

0.1

1.0

10

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

8.0

7.0

6.0

4.0

3.0

5.0

1.0

0

2.0

0.1

1.0

10

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

VCE = 5 V

10 V

TJ = 25°C

ftest = 1 MHz

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