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MJ21194G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MJ21194G
Description  Silicon Power Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 4
1
Publication Order Number:
MJ21193/D
MJ21193, MJ21194
Preferred Device
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain − hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
250
Vdc
Collector−Base Voltage
VCBO
400
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
400
Vdc
Collector Current − Continuous
Peak (Note 1)
IC
16
30
Adc
Base Current − Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C
PD
250
1.43
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.7
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5
ms, Duty Cycle ≤10%. (continued)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
x
= 3 or 4
MEXICO = Assembly Location
YY
= Year
WW
= Work Week
G
= Pb−Free Package
MJ2119x
MEXICO
YY WWG
TO−204AA
(TO−3)
CASE 1−07
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MJ21193
TO−3
100 Units / Tray
MJ21193G
TO−3
(Pb−Free)
100 Units / Tray
MJ21194
TO−3
100 Units / Tray
MJ21194G
TO−3
(Pb−Free)
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.


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