BC337 datasheet(2/5 Pages) ONSEMI

Part #	BC337

Description	Amplifier Transistors NPN Silicon

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 5 page

BC337, BC337−16, BC337−25, BC337−40, BC338−25

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 10 mA, IB = 0)

BC337

BC338

V(BR)CEO

45

25

−

Vdc

Collector −Emitter Breakdown Voltage

(IC = 100 mA, IE = 0)

BC337

BC338

V(BR)CES

50

30

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mA, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 30 V, IE = 0)

BC337

(VCB = 20 V, IE = 0)

BC338

ICBO

−

100

nAdc

Collector Cutoff Current

(VCE = 45 V, VBE = 0)

BC337

(VCE = 25 V, VBE = 0)

BC338

ICES

−

100

nAdc

Emitter Cutoff Current

(VEB = 4.0 V, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

BC337

BC337−16

BC337−25/BC338−25

BC337−40

(IC = 300 mA, VCE = 1.0 V)

hFE

100

160

250

60

−

630

250

400

630

−

Base−Emitter On Voltage

(IC = 300 mA, VCE = 1.0 V)

VBE(on)

−

1.2

Vdc

Collector −Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

VCE(sat)

−

0.7

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

−

15

−

pF

Current −Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT

−

210

−

MHz

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001 0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

qJC(t) = (t) qJC

qJC = 100°C/W MAX

qJA(t) = r(t) qJA

qJA = 375°C/W MAX

D CURVES APPLY FOR

POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

t1

t2

P(pk)

DUTY CYCLE, D = t1/t2

SINGLE PULSE

Similar Part No. - BC337

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	BC337	163Kb / 4P	Amplifier Transistor
NXP Semiconductors	BC337	245Kb / 19P	45 V, 500 mA NPN general-purpose transistors Rev. 06-17 November 2009
Unisonic Technologies	BC337	47Kb / 2P	SWITCHING AND AMPLIFIER APPLICATIONS
KEC(Korea Electronics)	BC337	31Kb / 1P	TO-92 PACKAGE
NXP Semiconductors	BC337	47Kb / 8P	NPN general purpose transistor 1999 Apr 15

More results

Similar Description - BC337

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MPS918	62Kb / 4P	Amplifier Transistors(NPN Silicon) 1996
	2N5088	83Kb / 5P	Amplifier Transistors NPN Silicon March, 2007 ??Rev. 4
	BC237	54Kb / 4P	Amplifier Transistors NPN Silicon January, 2006 ??Rev. 4
	2N5550	88Kb / 6P	Amplifier Transistors NPN Silicon March, 2007 ??Rev. 5
New Jersey Semi-Conduct...	MPSU06F	83Kb / 1P	NPN Silicon Amplifier Transistors
Leshan Radio Company	MMBT6428LT1	209Kb / 4P	Amplifier Transistors(NPN Silicon)
ON Semiconductor	MBT6429DW1T1	79Kb / 5P	Amplifier Transistors NPN Silicon December, 2005 ??Rev. 2
ON Semiconductor	BC237	83Kb / 4P	Amplifier Transistors(NPN Silicon) 1996 REV 1
Motorola, Inc	BD525	82Kb / 2P	NPN SILICON AMPLIFIER TRANSISTORS
ON Semiconductor	MPS918	46Kb / 3P	Amplifier Transistors NPN Silicon January, 2006 ??Rev. 3
ON Semiconductor	2N5209	277Kb / 6P	Amplifier Transistors(NPN Silicon) 1996

More results

BC337 Datasheet(PDF) 2 Page - ON Semiconductor

BC337 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - BC337

Similar Description - BC337

Html Pages

1 2 3 4 5

Datasheet Download

Link URL