© Semiconductor Components Industries, LLC, 2005

September, 2005 − Rev. 5

1

Publication Order Number:

BC337/D

BC337, BC337−16,

BC337−25, BC337−40,

BC338−25

Amplifier Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

BC337

BC338

Unit

Collector − Emitter Voltage

45

25

Vdc

Collector − Base Voltage

50

30

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

800

mAdc

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Total Device Dissipation

Derate above 25

°C

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Thermal Resistance,

Junction−to−Case

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

1

2

BASE

3

EMITTER

MARKING

DIAGRAM

BC33

x−xx

AYWW

G

G

BC33x−xx = Device Code

(Refer to page 4)

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

3

2

1

TO−92

CASE 29

STYLE 17