2N6400_04 datasheet(2/6 Pages) ONSEMI

Part #	2N6400

Description	Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS

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MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = *40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open)

2N6400

2N6401

2N6402

2N6403

2N6404

2N6405

VDRM,

VRRM

50

100

200

400

600

800

V

On-State Current RMS (180

° Conduction Angles; TC = 100°C)

IT(RMS)

16

A

Average On-State Current (180

° Conduction Angles; TC = 100°C)

IT(AV)

10

A

Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 90°C)

ITSM

160

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

145

A2s

Forward Peak Gate Power (Pulse Width

≤ 1.0 ms, TC = 100°C)

PGM

20

W

Forward Average Gate Power (t = 8.3 ms, TC = 100°C)

PG(AV)

0.5

W

Forward Peak Gate Current (Pulse Width

≤ 1.0 ms, TC = 100°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.5

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

* Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open)

TJ = 25°C

TJ = 125°C

IDRM,

IRRM

−

10

2.0

mA

ON CHARACTERISTICS

*Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%)

VTM

−

1.7

V

* Gate Trigger Current (Continuous dc)

TC = 25°C

(VD = 12 Vdc, RL = 100 W)TC = −40°C

IGT

−

9.0

−

30

60

mA

* Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 W)TC = 25°C

TC = −40°C

VGT

−

0.7

−

1.5

2.5

V

Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 W), TC = +125°C

VGD

0.2

−

V

* Holding Current

TC = 25°C

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)

*TC = −40°C

IH

−

18

−

40

60

mA

Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM)

tgt

−

1.0

−

ms

Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM)

TC = 25°C

TJ = +125°C

tq

−

15

35

−

ms

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform)

TJ = +125°C

dv/dt

−

50

−

V/

ms

*Indicates JEDEC Registered Data.

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