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STC08IE120HV Datasheet(PDF) 4 Page - STMicroelectronics |
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STC08IE120HV Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 11 page  Electrical characteristics STC08IE120HV 4/11 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICS(SS) Collector-source current (VBS = VGS = 0) VCE = 1200V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0) VBS(OS) = 30V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 17V 100 µA IGS(OS) Gate-source leakage VGS = ± 17V 100 nA VCS(ON) Collector-source ON voltage VGS = 10V _IC = 8A IB = 1.6A VGS = 10V_ IC = 4A IB = 0.4A 0.8 0.5 1 1.2 V V hFE DC current gain VGS = 10V_ IC = 8A VCS = 1V VGS = 10V_ IC = 4A_ VCS = 1V 5 7 VBS(ON) Base Source ON voltage VGS = 10V_ IC = 8A IB = 1.6A VGS = 10V_ IC = 4A_ IB = 0.4A 1.5 1.5 V V VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA 23 4V CISS Input capacitance VCS = 25V ______f = 1MHz VGS = 0 550 pF QGS(tot) Gate-source charge VGS = 10V 26 nC ts tf INDUCTIVE LOAD Storage time Fall time IC = 4A IB = 0.8A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs 670 15 ns ns ts tf INDUCTIVE LOAD Storage time Fall time IC = 4A IB = 0.4A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs 340 10.2 ns ns VCSW Maximum collector- source voltage switched without snubber RG = 47Ω hFE = 5A IC = 8A 1200 V VCS(dyn) Collector-source dynamic voltage (500ns) VCC = VClamp = 400V VGS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns 5.75 V VCS(dyn) Collector-source dynamic voltage (1 µs) VCC = VClamp = 400V VGS = 10V RG = 47Ω IC = 4A IB = 0.8A IBpeak = 4A tpeak = 500ns 3.35 V |
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