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STC08IE120HV Datasheet(PDF) 1 Page - STMicroelectronics |
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STC08IE120HV Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 11 page  January 2007 Rev 3 1/11 11 Order codes Part Number Marking Package Packaging STC08IE120HV C08IE120HV TO247-4L HV Tube STC08IE120HV Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω General features ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■ Squared RBSOA up to 1200V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time Applications ■ Flyback / forward SMPS ■ Sepic PFC Description The STC08IE120HV is manufactured in Monolith- ic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applications. It is designed for use in Gate Driven based topolo- gies. Internal schematic diagrams VCS(ON) IC RCS(ON) 0.8 V 8 A 0.10 W TO247-4L HV 1 2 3 4 www.st.com |
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