SGSD100_03 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	SGSD100

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.96

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCE = 80 V

Tc = 100

oC

0.5

1.5

mA

ICEV

Collector Cut-off

Current (VBE = -0.3V)

VCE = 80 V

Tc = 100

oC

0.1

2

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 60 V

Tc = 100

oC

0.5

1.5

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 50 mA

80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 20 mA

IC = 5 A

IB = 20 mA

Tc = 100

oC

IC = 10 A

IB = 40 mA

IC = 10 A

IB = 40 mA

Tc = 100

oC

IC = 20 A

IB = 80 mA

IC = 20 A

IB = 80 mA

Tc = 100

oC

0.95

0.8

1.2

1.3

2

2.3

1.2

1.75

3.5

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 20 A

IB = 80 mA

IC = 20 A

IB = 80 mA

Tc = 100

oC

2.6

2.5

3.3

V

VBE

∗

Base-Emitter Voltage

IC = 10 A

VCE = 3 V

IC = 10 A

VCE = 3 V

Tc = 100

oC

1

1.8

1.6

3V

V

hFE

∗

DC Current Gain

IC = 5 A

VCE = 3 V

IC = 5 A

VCE = 3 V

Tc = 100

oC

IC = 10 A

VCE = 3 V

IC = 10 A

VCE = 3 V

Tc = 100

oC

IC = 20 A

VCE = 3 V

IC = 20 A

VCE = 3 V

Tc = 100

oC

600

500

300

5000

8000

4000

8000

2000

15000

12000

6000

VF

∗

Diode Forward Voltage

IF = 5 A

Tc = 100

o C

IF = 10 A

Tc = 100

oC

IF = 20 A

Tc = 100

oC

1.2

0.85

1.6

1.4

2.3

1.3

V

Es/b

Second Breakdown

Energy

VCC = 30 V

L = 3 mH

VCC = 30 V

L = 3 mH

Tc = 100

oC

250

mJ

Is/b

Second Breakdown

Current

VCE = 25 V

t = 500 ms

6

A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP type voltage and current values are negative.

SGSD100/SGSD200

2/6

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