2N3055(NPN), MJ2955(PNP)

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2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

1.52

_C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS*

60

−

Vdc

70

−

Vdc

−

0.7

mAdc

Collector Cutoff Current

−

−

1.0

5.0

mAdc

−

5.0

mAdc

ON CHARACTERISTICS* (Note 1)

DC Current Gain

20

5.0

70

−

−

Collector−Emitter Saturation Voltage

−

1.1

3.0

Vdc

−

1.5

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

2.87

−

Adc

DYNAMIC CHARACTERISTICS

2.5

−

MHz

15

120

−

10

−

kHz

*Indicates Within JEDEC Registration. (2N3055)

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

20

6

Figure 2. Active Region Safe Operating Area

10

6

4

2

1

0.6

0.4

0.2

10

20

40

60

dc

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated for temperature according to Figure 1.