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1N5822 Datasheet(PDF) 2 Page - ON Semiconductor |
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1N5822 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page 1N5820, 1N5821, 1N5822 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol 1N5820 1N5821 1N5822 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V Non−Repetitive Peak Reverse Voltage VRSM 24 36 48 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified Forward Current (Note 1) VR(equiv) v 0.2 VR(dc), TL = 95°C (RqJA = 28°C/W, P.C. Board Mounting, see Note 5) IO 3.0 A Ambient Temperature Rated VR(dc), PF(AV) = 0 RqJA = 28°C/W TA 90 85 80 °C Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase 60 Hz, TL = 75°C) IFSM 80 (for one cycle) A Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg 65 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *THERMAL CHARACTERISTICS (Note 5) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 28 °C/W *ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Symbol 1N5820 1N5821 1N5822 Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) VF 0.370 0.475 0.850 0.380 0.500 0.900 0.390 0.525 0.950 V Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) TL = 25°C TL = 100°C iR 2.0 20 2.0 20 2.0 20 mA 1. Lead Temperature reference is cathode lead 1/32 ″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. *Indicates JEDEC Registered Data for 1N5820−22. |
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