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1N5822 Datasheet(PDF) 1 Page - ON Semiconductor |
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1N5822 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 9 1 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction • Shipped in plastic bags, 500 per bag • Available in Tape and Reel, 1500 per reel, by adding a “RL’’ suffix to the part number • Pb−Free Packages are Available* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Preferred devices are recommended choices for future use and best overall value. MARKING DIAGRAM See detailed ordering and shipping information on page 3 of this data sheet. ORDERING INFORMATION http://onsemi.com A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) A 1N 582x YYWW G G |
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