Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic

full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved

RBSOA performance.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

5.0

V

I

Csat

Collector saturation current

f = 64 kHz

6.0

-

A

t

s

Storage time

I

1.7

2.0

µs

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

800

V

I

C

Collector current (DC)

-

12

A

I

CM

Collector current peak value

-

30

A

I

B

Base current (DC)

-

8

A

I

BM

Base current peak value

-

12

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

200

mA

-I

BM

Reverse base current peak value

1

-7

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

without heatsink compound

-

3.7

K/W

R

th j-hs

Junction to heatsink

with heatsink compound

-

2.8

K/W

R

th j-a

Junction to ambient

in free air

35

-

K/W

case

12 3

b

c

e

Rbe

1 Turn-off current.

September 1997

1

Rev 1.200