Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

110

-

mA

R

EB

Base-emitter resistance

V

-

55

-

Ω

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

5.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.1

V

h

FE

DC current gain

I

-

11

-

h

FE

I

5

7

10

V

F

Diode forward voltage

I

-

1.6

2.0

V

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

145

-

pF

Switching times (64 kHz line

I

deflection circuit)

C

L

t

s

Turn-off storage time

1.7

2.0

µs

t

f

Turn-off fall time

0.1

0.2

µs

V

fr

Anti-parallel diode forward recovery

I

-

V

voltage

t

fr

Anti-parallel diode forward recovery

V

410

-

ns

time

2 Measured with half sine-wave voltage (curve tracer).

September 1997

2

Rev 1.200