BU2527DF datasheet(5/7 Pages) PHILIPS

Part #	BU2527DF

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DF

Fig.13. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Ths)

Fig.14. Transient thermal impedance.

Z

th j-hs = f(t); parameter D = tp/T

Fig.15. Reverse bias safe operating area. T

j ≤ Tjmax

Fig.16. Forward bias safe operating area. T

hs = 25 ˚C

I

CDC & ICM = f(VCE); ICM single pulse; parameter tp

Second-breakdown limits independant of temperature.

Mounted with heatsink compound.

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

0

30

20

10

0

500

1000

1500

VCE / V

IC / A

BU2527AF

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

BU2525AF

10

1

0.1

0.01

0.001

D =

tp

T

P

t

D

D = 0

0.02

0.05

0.1

0.2

0.5

BU2525AF

IC / A

100

10

1

0.1

0.01

1

10

100

1000 VCE / V

100 us

1 ms

10 ms

DC

40 us

tp =

Ptot

ICM

ICDC

= 0.01

September 1997

5

Rev 1.200

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