BU2522DX datasheet(3/7 Pages) PHILIPS

Part #	BU2522DX

Description	Silicon Diffused Power Transistor

PDF	7 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DX

Fig.1. Switching times waveforms (64 kHz).

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. Test Circuit RBSOA. V

CC = 140 V; -VBB = 4 V;

L

C = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;

C

FB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A

Fig.5. Typical DC current gain. h

FE = f (IC)

parameter V

CE

Fig.6. Typical base-emitter saturation voltage.

V

BEsat = f (IC); parameter IC/IB

V

ICsat

I

end

16 us

6.5 us

5 us

t

TRANSISTOR

DIODE

B

I C

I B

CE

LB

IBend

-VBB

LC

T.U.T.

VCC

VCL

CFB

Rbe

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

- IBM

0.1

10

IC / A

hFE

100

10

1

100

1

Tj = 25 C

Tj = 125 C

5 V

1 V

+ 150 v nominal

adjust for ICsat

Lc

Cfb

D.U.T.

LB

IBend

-VBB

Rbe

0.1

1

10

IC / A

VBESAT / V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

IC/IB=

3

4

5

September 1997

3

Rev 1.200

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