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BU2522DX Datasheet(PDF) 5 Page - NXP Semiconductors |
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BU2522DX Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 7 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DX Fig.13. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.14. Reverse bias safe operating area. T j ≤ Tjmax Fig.15. Forward bias safe operating area. T hs = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound. 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) D = 0 0.02 0.05 0.1 0.2 0.5 D = tp tp T T P t D 10 1 0.1 0.01 0.001 BU2520AF IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V 100 us 1 ms 10 ms DC 30 us tp = Ptot ICM ICDC = 0.01 BU2522AF 0 30 20 10 0 500 1000 1500 VCE / V IC / A September 1997 5 Rev 1.200 |
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