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BU2522DX Datasheet(PDF) 4 Page - NXP Semiconductors

Part # BU2522DX
Description  Silicon Diffused Power Transistor
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2522DX Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DX
Fig.7. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.8. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.9. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.10. Typical turn-off losses. T
j = 85˚C
Poff = f (I
B); parameter IC; f = 64 kHz
Fig.11. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
Fig.12. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Ths)
0.1
10
IC / A
VCESAT / V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0
0.2
0.4 0.6
0.8
1
1.2 1.4
1.6
1.8
2
IB / A
Poff / W
BU2522AF
100
10
1
IC =
6A
5A
0
1
2
3
4
IB / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IB / A
ts, tf / us
BU2522AF
4
3.5
3
2.5
2
1.5
1
0.5
0
IC =
6A
5A
0.1
1
10
IB / A
VCESAT / V
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
September 1997
4
Rev 1.200


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