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BU2508DF Datasheet(PDF) 2 Page - NXP Semiconductors |
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BU2508DF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink without heatsink compound - 3.7 K/W R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - 227 - mA BV EBO Emitter-base breakdown voltage I B = 600 mA 7.5 13.5 - V R be Base-emitter resistance V EB = 7.5 V - 33 - Ω V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 700 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 4.5 A; IB = 1.12 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 4.5 A; IB = 1.7 A - - 1.1 V h FE DC current gain I C = 1 A; VCE = 5 V - 13 - h FE I C = 4.5 A; VCE = 1 V 4 5.5 7.0 V F Diode forward voltage I F = 4.5 A - 1.6 2.0 V DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C c Collector capacitance I E = 0 A; VCB = 10 V; f = 1 MHz 80 - pF Switching times (16 kHz line I Csat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; deflection circuit) -V BB = 4 V; (-dIB/dt = 0.6 A/µs) t s Turn-off storage time 5.0 6.0 µs t f Turn-off fall time 0.4 0.6 µs Switching times (38 kHz line I Csat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; deflectioin circuit) -V BB = 4 V; (-dIB/dt = 0.6 A/µs) t s Turn-off storage time 4.7 5.7 µs t f Turn-off fall time 0.25 0.35 µs 2 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.600 |
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