Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2508DF

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television

receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low

worst case dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.0

V

I

Csat

Collector saturation current

4.5

-

A

V

F

Diode forward voltage

I

1.6

2.0

V

t

f

Fall time

I

0.4

0.6

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1500

V

V

CEO

Collector-emitter voltage (open base)

-

700

V

I

C

Collector current (DC)

-

8

A

I

CM

Collector current peak value

-

15

A

I

B

Base current (DC)

-

4

A

I

BM

Base current peak value

-

6

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

100

mA

-I

BM

Reverse base current peak value

1

-5

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

12

3

case

b

c

e

Rbe

1 Turn-off current.

July 1998

1

Rev 1.600