![]() |
Electronic Components Datasheet Search |
|
BU1508DX Datasheet(PDF) 3 Page - NXP Semiconductors |
|
|
BU1508DX Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page ![]() Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit. Fig.4. Typical DC current gain. h FE = f (IC) parameter V CE Fig.5. Typical base-emitter saturation voltage. V BEsat = f (IC); parameter IC/IB Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE 0.01 1 IC / A 100 10 1 0.1 10 5V h FE 1V Tj = 25 C Tj = 125 C ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 0.1 1 10 IC / A VBESAT / V 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 IC/IB= 3 4 5 Tj = 25 C Tj = 125 C + 150 v nominal adjust for ICsat 1mH 12nF D.U.T. LB IBend -VBB Rbe 0.1 1 10 IC / A VCESAT / V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IC/IB= 4 5 3 Tj = 25 C Tj = 125 C September 1997 3 Rev 1.300 |
Similar Part No. - BU1508DX |
|
Similar Description - BU1508DX |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |