BU1508DX datasheet(4/7 Pages) PHILIPS

Part #	BU1508DX

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1508DX

Fig.7. Typical base-emitter saturation voltage.

V

BEsat = f (IB); parameter IC

Fig.8. Typical collector-emitter saturation voltage.

V

CEsat = f (IB); parameter IC

Fig.9. Typical turn-off losses. T

j = 85˚C

Eoff = f (I

B); parameter IC

Fig.10. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); parameter IC; Tj = 85˚C

Fig.11. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Ths)

Fig.12. Transient thermal impedance.

Z

th j-hs = f(t); parameter D = tp/T

0

1

2

3

4

IB / A

VBESAT / V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

IC=

6A

4.5A

3A

2A

Tj = 25 C

Tj = 125 C

0.1

1

10

IB / A

ts, tf / us

12

11

10

9

8

7

6

5

4

3

2

1

0

IC =

4.5A

3.5A

ts

tf

0.1

1

10

IB / A

VCESAT / V

10

1

0.1

IC=2A

3A

4.5A

6A

Tj = 25 C

Tj = 125 C

Tj = 25 C

Tj = 125 C

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

0.1

1

10

IB / A

Eoff / uJ

1000

100

10

IC = 4.5A

3.5A

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

10

1

0.1

0.01

D = 0

0.02

0.05

0.1

0.2

0.5

D =

tp

T

P

t

D

September 1997

4

Rev 1.300

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