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NM27C512N120 Datasheet(PDF) 1 Page - National Semiconductor (TI) |
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NM27C512N120 Datasheet(HTML) 1 Page - National Semiconductor (TI) |
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1 / 10 page  TLD10834 February 1994 NM27C512 524288-Bit (64K x 8) High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 08 micron CMOS AMGTM EPROM technology for an excellent combi- nation of speed and economy while providing excellent reli- ability The NM27C512 provides microprocessor-based systems storage capacity for portions of operating system and appli- cation software Its 90 ns access time provides no- wait-state operation with high-performance CPUs The NM27C512 offers a single chip solution for the code storage requirements of 100% firmware-based equipment Fre- quently-used software routines are quickly executed from EPROM storage greatly enhancing system utility The NM27C512 is configured in the standard JEDEC EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit Features Y High performance CMOS 90 ns access time Y Fast turn-off for microprocessor compatibility Y Manufacturers identification code Y JEDEC standard pin configuration 28-pin DIP package 32-pin chip carrier Block Diagram TLD10834 – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation NSC800TM is a trademark of National Semiconductor Corporation AMGTM is a trademark of WSI Inc C1995 National Semiconductor Corporation RRD-B30M65Printed in U S A |
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