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NM27C512N120 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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NM27C512N120 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 10 page Programming Characteristics (Notes 1 and 2) Symbol Parameter Conditions Min Typ Max Units tAS Address Setup Time 1 m s tOES OE Setup Time 1 m s tDS Data Setup Time 1 m s tVCS VCC Setup Time 1 m s tAH Address Hold Time 0 m s tDH Data Hold Time 1 m s tCF Chip Enable to Output Float Delay OE e VIL 060 ns tPW Program Pulse Width 95 100 105 m s tOEH OE Hold Time 1 m s tDV Data Valid from CE OE e VIL 250 ns tPRT OE Pulse Rise Time 50 ns during Programming tVR VPP Recovery Time 1 m s IPP VPP Supply Current during CE e VIL 30 mA Programming Pulse OE e VPP ICC VCC Supply Current 50 mA TR Temperature Ambient 20 25 30 C VCC Power Supply Voltage 6 625 65 V VPP Programming Supply Voltage 125 1275 13 V tFR Input Rise Fall Time 5 ns VIL Input Low Voltage 0 045 V VIH Input High Voltage 24 4 V tIN Input Timing Reference Voltage 08 2 V tOUT Output Timing Reference Voltage 08 2 V Programming Waveforms TLD10834 – 5 Note 1 National’s standard product warranty applies to devices programmed to specifications described herein Note 2 VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP The EPROM must not be inserted into or removed from a board with voltage applied to VPP or VCC Note 3 The maximum absolute allowable voltage which may be applied to the VPP pin during programming is 14V Care must be taken when switching the VPP supply to prevent any overshoot from exceeding this 14V maximum specification At least a 01 mF capacitor is required across VCC to GND to suppress spurious voltage transients which may damage the device Note 4 Programming and program verify are tested with the fast Program Algorithm at typical power supply voltages and timings 5 |
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