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TPD4113K Datasheet(PDF) 8 Page - Toshiba Semiconductor

Part # TPD4113K
Description  Intelligent Power Device High Voltage Monolithic Silicon Power IC
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4113K Datasheet(HTML) 8 Page - Toshiba Semiconductor

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TENTATIVE
TPD4113K
2005-05-20
8
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VBB
50
280
450
Operating power supply voltage
VCC
13.5
15
16.5
V
IBB
VBB = 450 V
0
0.5
ICC
VCC = 15 V
1.1
5
mA
IBS (ON)
VBS = 15 V, high side ON
260
410
Current dissipation
IBS (OFF)
VBS = 15 V, high side OFF
230
370
µA
VIH
VIN = “H”
3.5
Input voltage
VIL
VIN = “L”
1.5
V
IIH
VIN = 5V
150
Input current
IIL
VIN = 0 V
100
µA
VCEsatH
VCC = 15 V, IC = 0.5 A
2.3
3
Output saturation voltage
VCEsatL
VCC = 15 V, IC = 0.5 A
2.3
3
V
VFH
IF
= 0.5 A, high side
1.6
2.0
FRD forward voltage
VFL
IF
= 0.5 A, low side
1.6
2.0
V
Regulator voltage
VREG
IF
= 500μA
0.9
1.2
V
BSD forward voltage
VF (BSD)
VCC = 15 V, IO = 30 mA
6.5
7
7.5
V
Current limiting voltage
VR
0.46
0.5
0.54
V
Current limiting dead time
Dt
2.3
3.3
4.4
μs
Thermal shutdown temperature
TSD
VCC = 15 V
135
150
180
Thermal shutdown hysteresis
∆TSD
VCC = 15 V
50
VCC under voltage protection
VCCUVD
10
11
12
V
VCC under voltage protection recovery
VCCUVR
10.5
11.5
12.5
V
VBS under voltage protection
VBSUVD
8
9
9.5
V
VBS under voltage protection recovery
VBSUVR
8.5
9.5
10.5
V
DIAG saturation voltage
VDIAGsat
IDIAG=5mA
0.5
V
Output on delay time
ton
VBB = 280 V, IC = 0.5 A
1.5
3
µs
Output off delay time
toff
VBB = 280 V, IC = 0.5 A
1.2
3
µs
Dead time
tdead
VBB = 280 V, IC = 0.5 A
1.4
µs
FRD reverse recovery time
trr
VBB = 280 V, IC = 0.5 A
200
ns


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