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TPD4113K Datasheet(PDF) 7 Page - Toshiba Semiconductor

Part # TPD4113K
Description  Intelligent Power Device High Voltage Monolithic Silicon Power IC
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD4113K Datasheet(HTML) 7 Page - Toshiba Semiconductor

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TENTATIVE
TPD4113K
2005-05-20
7
Truth Table
Input
Top arm
Bottom arm
Mode
HU HV HW LU LV LW
phase
phase
phase
phase
phase
phase
DIAG
Normal
ON
OFF
OFF
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
OFF
ON
OFF
OFF
ON
OFF
OFF
OFF
ON
OFF
OFF
ON
OFF
ON
OFF
OFF
OFF
OFF
OFF
ON
ON
OFF
OFF
OFF
OFF
OFF
ON
OFF
ON
OFF
OFF
Over current
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
Thermal shutdown
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
Under voltage
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
OFF
OFF
OFF
OFF
OFF
OFF
ON
Notes: Release of Thermal shutdown protection and under voltage protection depends release of a self-reset and over current
protection on an all "L" input.
Absolute Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
VBB
500
V
Power supply voltage
VCC
18
V
Output current (DC)
Iout
1
A
Output current (pulse)
Iout
2
A
Input voltage
VIN
−0.5~7
V
VREG current
IREG
50
mA
Power dissipation (Ta
= 25°C)
PC
4
W
Power dissipation (Tc
= 25°C)
PC
20
W
Operating temperature
Tjopr
−20~135
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~150
°C
Lead-heat sink isolation voltage
Vhs
1000 (1 min)
Vrms


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