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M60006P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M60006P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 5 page  MITSUBISHI 〈DIGITAL ASSP〉 M66006P/FP 12-BIT I/O EXPANDER 3 Test conditions VO=0.1V, VCC–0.1V |IO|=20 µA VO=0.1V, VCC–0.1V |IO|=20 µA VO=0.1V, VCC–0.1V |IO|=20 µA VO=0.1V, VCC–0.1V |IO|=20 µA VI=VT+, VT– VCC=4.5V VI=VT+, VT– VCC=6V VI=VCC, GND, VCC=6V Conditions VI<0V VI>VCC VO<0V VO>VCC GND Ratings –0.5 ~ +7.0 –0.5 ~ VCC + 0.5 –0.5 ~ VCC + 0.5 –20 20 –20 20 –48 –60 ~ 150 Symbol VCC VI VO IIK IOK IGND Tstg Parameter Supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current GND current Storage temperature Unit V V V mA mA mA °C ABSOLUTE MAXIMUM RATINGS (Ta = –20 ~ 75 °C unless otherwise noted) RECOMMENDED OPERATIONAL CONDITIONS Symbol VCC VI VO Topr Parameter Supply voltage Input voltage Output voltage Operating temperature Limits Min. 2 0 0 –20 Typ. Max. 6 VCC VCC 75 Unit V V V °C Symbol VT+ VT– VIH VIL VOL IO ICC Parameter Positive direction threshold voltage *1 Negative direction threshold voltage *1 “H” input voltage *2 “L” input voltage *2 “L” output voltage Maximum output leak current Static power dissipation ELECTRICAL CHARACTERISTICS (VCC = 2 ~ 6V unless otherwise noted) Limits Max. 0.8 × VCC 0.65 × VCC 0.25 × VCC 0.5 10.0 –10.0 100.0 Min. 0.35 × VCC 0.2 × VCC 0.75 × VCC Max. 0.8 × VCC 0.65 × VCC 0.25 × VCC 0.4 1.0 –1.0 10.0 Typ. Unit V V V V V µA µA Min. 0.35 × VCC 0.2 × VCC 0.75 × VCC Ta=25˚C Ta= –20~75˚C IOL=3mA VO=VCC VO=GND *1: DI, CLK, CS, S *2: D1~D12 Symbol fmax tPLZ tPZL tPLZ tPZL tPLZ Parameter Maximum repeat frequency Output “L-Z”, “Z-L” propagation time CLK-DO Output “L-Z”, “Z-L” propagation time CS-D1 to D12 Output “L-Z” propagation time S-DO, D1 to D12 SWITCHING CHARACTERISTICS (VCC = 5V) Unit MHz ns ns ns ns ns Limits Max. 400 400 400 400 400 Min. 1.9 Max. 300 300 300 300 300 Typ. Min. 2.5 CL=50pF RL=1k Ω (Note 2) Ta=25˚C Ta= –20~75˚C Test conditions |
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