Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

CMPA2560025F

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

Description

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs also

offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier enabling very wide bandwidths to be achieved in a small

footprint screw-down package featuring a Copper-Tungsten heat-sink.

PN: CMPA2560025F

Package Type: 780019

Typical Performance Over 2.5 - 6.0 GHz (T

C = 25˚C)

Note:

1

P

SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA

Features

• 24 dB Small Signal Gain

• 25 W Typical P

SAT

• Operation up to 28 V

• High Breakdown Voltage

• HighTemperatureOperation

Applications

• UltraBroadbandAmplifiers

• Fiber Drivers

• Test Instrumentation

• EMC Amplifier Drivers

Parameter

2.5 GHz

4.0 GHz

6.0 GHz

Units

Gain

27.5

14.9

23.1

dB

Saturated Output Power, P

SAT

1

35.8

177

25.6

W

Power Gain @ P

OUT 43 dBm

23.1

100

16.3

dB

PAE @ P

OUT 43 dBm

31.5

11.6

30.7

%

Figure 1.