CMPA2560025F

6

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

General Device Information

The CMPA2560025F is a two stage GaN HEMT MMIC Power Amplifier, which operates between 2.5- 6.0 GHz. The amplifier typically

provides 25 dB of small signal gain and 25 W saturated output power with an associated power added efficiency of better than

30 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from dedicated

ports. The RF-input and output both require an external DC-block. DC voltage should not be applied to the RF output pin due to

the internal matching elements. The two gate pins, G1 and G2, are internally connected so it is sufficient to apply bias to only one

of them. The drain pins, D1 and D2, should both be connected to the drain supply. The component has internal DC-decoupling on

the gate and drain pins, 1840pF and 920pF respectively. The test fixture also provides extra decoupling capacitors on all supply

lines. Details of these components can be found on the bill of materials.

The CMPA2560025F is provided in a lead-less package format. The input and output connections are gold plated to enable gold

bond wire attach at the next level assembly.

The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. All losses

associated with the test fixture are included in the measurements.

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Class

Test Methodology

Human Body Model

HBM

1A (> 250 V)

JEDEC JESD22 A114-D

Charge Device Model

CDM

II (200 < 500 V)

JEDEC JESD22 C101-C