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Rev. 2.3, 2022-12-13

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The information in this document is subject to change without notice.

CMPA2560025D

PN: CMPA2560025D

25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

Description

Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC contains a two-stage reactively

matched amplifier design approach enabling very wide bandwidths to be achieved.

Features

• 24 dB Small Signal Gain

• 25 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.180 x 0.145 x 0.004 inches

Applications

• Ultra Broadband Amplifiers

• Fiber Drivers

• Test Instrumentation

• EMC Amplifier Drivers

Parameter

2.5 GHz

4.0 GHz

6.0 GHz

Units

Gain

27.5

24.3

23.1

dB

Saturated Output Power, PSAT1

35.8

37.5

25.6

W

Power Gain @ POUT = 43 dBm

23.1

20.9

16.3

dB

PAE @ POUT 43 dBm

31.5

32.8

30.7

%

Typical Performance Over 2.5-6.0 GHz (TC = 25ºC)

Note: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA