CMPA0760020F – Specifications

Page 2

Rev. 0.0 – October 2022

4600 Silicon Drive | Durham, NC 27703 | Wolfspeed.com

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The information in the document is subject to change without notice.

Absolute Maximum Ratings

Parameter

Symbol

Units

Value

Conditions

Drain to Source Voltage

VDSS

V

84

Drain Voltage

VD

V

31

Gate Voltage

VG

V

-1

Drain Current

ID

A

3

Gate Current

IG

mA

20

Input Power

Pin

dBm

30

Dissipated Power

Pdiss

W

50

85oC

Storage Temperature

Tstg

o

C

-55, +150

Mounting Temperature

TJ

o

C

260

30 seconds

Junction Temperature

TJ

o

C

225

MTTF > 1E6

Output Mismatch Stress

VSWR

Ψ

5:1

Recommended Operating Conditions

Parameter

Symbol

Units

Typical Value

Conditions

Drain Voltage

Vd

V

28

Gate Voltage

Vg

V

-1.85

Drain Current

Idq

mA

600

Input Power

Pin

dBm

23

Case Temperature

Tcase

o

C

-40 to 85

RF Specifications

Test conditions unless otherwise noted: Vd=28 V, Idq=600mA, CW, Pin = 23 dBm, Tbase=25 oC, Frequency: 3GHz

Parameter

Units Frequency

Min

Typical

Max

Conditions

Frequency

GHz

0.7

6.0

Output Power

dBm

0.7

44

3

44

6

43

Power-added

Efficiency

%

0.7

40

3

36

6

33

LSG

dB

0.7

21

3

21

6

20

Small-Signal Gain

dB

0.7

30

Pin = -20 dBm

3

33

6

35

Input Return Loss

dB

12

Pin = -20 dBm

Output Return Loss

(S22)

dB

10

Pin = -20 dBm