Philips Semiconductors

Product specification

Triacs

BT136 series

Fig.7. Normalised gate trigger current

I

Fig.8. Normalised latching current I

versus junction temperature T

Fig.9. Normalised holding current I

versus junction temperature T

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

pulse width t

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dI

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dI

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BT136

Tj / C

T2+ G+

T2+ G-

T2- G-

T2- G+

IGT(Tj)

IGT(25 C)

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

10

12

BT136

VT / V

IT / A

Tj = 125 C

Tj = 25 C

typ

max

Vo = 1.27 V

Rs = 0.091 ohms

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IL(Tj)

IL(25 C)

10us

0.1ms

1ms

10ms

0.1s

1s

10s

0.01

0.1

1

10

BT136

tp / s

Zth j-mb (K/W)

unidirectional

bidirectional

t

p

P

t

D

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IH(Tj)

IH(25C)

0

50

100

150

1

10

100

1000

1.8

3

Tj / C

dIcom/dt = 5.1

3.9

2.3

dVcom/dt (V/us)

A/ms

1.4

off-state dV/dt limit

BT136...G SERIES

BT136 SERIES

BT136...F SERIES

August 1997

4

Rev 1.200