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REF192ES-REEL7 Datasheet(PDF) 11 Page - Analog Devices |
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REF192ES-REEL7 Datasheet(HTML) 11 Page - Analog Devices |
11 / 28 page REF19x Series Rev. I | Page 11 of 28 ELECTRICAL CHARACTERISTICS—REF195 @ −40°C ≤ TA ≤ +125°C @ VS = 5.20 V, −40°C ≤ TA ≤ +125°C, unless otherwise noted. Table 16. Parameter Mnemonic Condition Min Typ Max Unit TEMPERATURE COEFFICIENT1, 2 E Grade TCVO/°C IOUT = 0 mA 2 ppm/°C F Grade 5 ppm/°C G Grade3 10 ppm/°C LINE REGULATION4 E Grade ΔVO/ΔVIN 5.20 V ≤ VS ≤ 15 V, IOUT = 0 mA 5 ppm/V F and G Grades 10 ppm/V LOAD REGULATION4 E Grade ΔVO/ΔVLOAD VS = 6.45 V, 0 mA ≤ IOUT ≤ 20 mA 5 ppm/mA F and G Grades 10 ppm/mA DROPOUT VOLTAGE VS − VO VS = 5.60 V, ILOAD = 10 mA 0.60 V VS = 6.45 V, ILOAD = 20 mA 1.45 V 1 For proper operation, a 1 μF capacitor is required between the output pin and the GND pin of the device. 2 TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/°C. TCVO = (VMAX − VMIN)/VO(TMAX − TMIN) 3 Guaranteed by characterization. 4 Line and load regulation specifications include the effect of self-heating. ELECTRICAL CHARACTERISTICS—REF196 @ TA = 25°C @ VS = 3.5 V, TA = 25°C, unless otherwise noted. Table 17. Parameter Mnemonic Condition Min Typ Max Unit INITIAL ACCURACY1 G Grade VO IOUT = 0 mA 3.290 3.3 3.310 V LINE REGULATION2 G Grade ΔVO/ΔVIN 3.50 V ≤ VS ≤ 15 V, IOUT = 0 mA 4 8 ppm/V LOAD REGULATION2 G Grade ΔVO/ΔVLOAD VS = 5.0 V, 0 mA ≤ IOUT ≤ 30 mA 6 15 ppm/mA DROPOUT VOLTAGE VS − VO VS = 4.1 V, ILOAD = 10 mA 0.80 V VS = 4.3 V, ILOAD = 30 mA 1.00 V LONG-TERM STABILITY3 DVO 1000 hours @ 125°C 1.2 mV NOISE VOLTAGE eN 0.1 Hz to 10 Hz 33 μV p-p 1 Initial accuracy includes temperature hysteresis effect. 2 Line and load regulation specifications include the effect of self-heating. 3 Long-term stability specification is noncumulative. The drift in subsequent 1000-hour periods is significantly lower than in the first 1000-hour period. |
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