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CIL351 Datasheet(PDF) 1 Page - Continental Device India Limited

Part # CIL351
Description  NPN SILICON PLANAR TRANSISTORS
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CIL351 Datasheet(HTML) 1 Page - Continental Device India Limited

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NPN SILICON PLANAR TRANSISTORS
CIL351/352
TO-18
Metal Can Package
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Rth (j-a)
Junction to Case
Rth (j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
70
V
Collector Base Voltage
VCBO
IC=100µA, IE=0
75
V
Emitter Base Voltage
VEBO
IE=100µA, IC=0
6.0
V
Collector Cut Off Current
ICBO
VCB=20V, IE=0
25
nA
DC Current Gain
hFE
IC=1mA, VCE=10V
CIL351
100
250
CIL352
200
480
Collector Emitter Saturation Voltage
*VCE (sat)
IC=10mA, IB=0.5mA
0.25
V
IC=100mA, IB=5mA
0.60
V
Base Emitter on Voltage
VBE (on)
IC=10mA, VCE=5V
1.0
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Transition Frequency
fT
IC=10mA, VCE=5V,
f=100MHz
100
MHz
*Pulse Condition: Pulse Width <300
µµs, Duty Cycle <2%
CIL351_352Rev_1 120504E
ºC/W
233
UNIT
V
V
583
ºC/W
V
mA
mW
mW/ ºC
mW
200
300
1.72
750
VALUE
70
75
6.0
4.29
- 65 to +200
mW/ ºC
ºC
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company


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