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IS61SP6464 Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS61SP6464 Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
7 / 20 page ![]() IS61SP6464 ISSI® Integrated Silicon Solution, Inc. — 1-800-379-4774 7 Rev. A 04/17/01 DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage IOH = –4.0 mA 2.4 — V VOL Output LOW Voltage IOL = 8 mA — 0.4 V VIH Input HIGH Voltage 2.0 VCCQ + 0.3 V VIL Input LOW Voltage –0.3 0.8 V ILI Input Leakage Current GND - VIN - VCCQ(2) Com. –22 µA Ind. –10 10 ILO Output Leakage Current GND - VOUT - VCCQ, OE = VIH Com. –22 µA Ind. –10 10 CAPACITANCE(1,2) Symbol Parameter Conditions Max. Unit CIN Input Capacitance VIN = 0V 5 pF COUT Input/Output Capacitance VOUT = 0V 7 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V. AC TEST CONDITIONS Parameter Unit Input Pulse Level 0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V and Reference Level Output Load See Figures 1 and 2 AC TEST LOADS Output Buffer ZO = 50 Ω 1.5V 50 Ω 30 pF Figure 1 Figure 2 317 Ω 5 pF Including jig and scope 351 Ω OUTPUT 3.3V |
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