MRF9002NR2 datasheet(2/12 Pages) FREESCALE

Part #	MRF9002NR2

Description	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF9002NR2

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 20 μAdc)

VGS(th)

2.4

—

4

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 25 mAdc)

VGS(Q)

3

—

5

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 0.1 Adc)

VDS(on)

—

0.3

—

Vdc

Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)

Common-Source Amplifier Power Gain @ P1dB

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

Gps

15

18

—

dB

Drain Efficiency @ P1dB

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

η

35

50

—

%

Input Return Loss @ P1dB

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

IRL

—

-15

-9

dB

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz)

P1dB

34

37

—

dBm

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MRF9002NR2 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

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