MRF9002NR2

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor Array

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies to 1000 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common-source amplifier applications in 26 volt

base station equipment. The device is in a PFP-16 Power Flat Pack package

which gives excellent thermal performances through a solderable backside

contact.

• Typical Performance at 960 MHz, 26 Volts

Output Power — 2 Watts Per Transistor

Power Gain — 18 dB

Efficiency — 50%

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW

Output Power

Features

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5, +65

Vdc

Gate-Source Voltage

- 0.5, + 15

Vdc

4

W

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

150

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case, Single Transistor

12

°C/W

Table 3. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF9002NR2

Rev. 8, 5/2006

Freescale Semiconductor

Technical Data

MRF9002NR2

1000 MHz, 2 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFET

CASE 978-03

PLASTIC

PFP-16

Figure 1. Pin Connections

16

15

14

13

12

11

10

1

2

3

4

5

6

7

8

(Top View)

9

N.C.

GATE1

N.C.

GATE2

N.C.

GATE3

N.C.

DRAIN 1−1

DRAIN 1−2

DRAIN 2−1

DRAIN 2−2

N.C.

DRAIN 3−1

DRAIN 3−2

N.C.

N.C.

Note: Exposed backside flag is source

terminal for transistors.

16

1

© Freescale Semiconductor, Inc., 2006. All rights reserved.